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ROHM - BSM120D12P2C005 - Silicon Carbide Bipolar (BJT) Single Transistor, N Channel, 120 A, 1.2 kV, 2.7 V
- Transistor Polarity: N Channel
- Continuous Drain Current Id: 120A
- Drain Source Voltage Vds: 1.2kV
- On Resistance Rds(on): -
- Rds(on) Test Voltage Vgs: -
- Threshold Voltage Vgs: 2.7V
- Power Dissipation Pd: 780W
- Operating Temperature Max: 150°C
- Product Range: -
- SVHC: No SVHC (15-Jun-2015)
- No. of Pins: 10Pins
- Operating Temperature Min: -40°C
- Transistor Case Style: Module