Documenten en downloads
Description
- Collector Emitter Saturation Voltage: 1.1V
- Collector Emitter Saturation Voltage Vce(on): 1.1V
- Collector Emitter Voltage Max: 750V
- Collector Emitter Voltage V(br)ceo: 750V
- Continuous Collector Current: 450A
- DC Collector Current: 450A
- IGBT Configuration: Six Pack [Full Bridge]
- IGBT Technology: IGBT EDT2 [Trench/Field Stop]
- IGBT Termination: Press Fit
- Junction Temperature Tj Max: 175°C
- Operating Temperature Max: 175°C
- Power Dissipation: 1.053kW
- Power Dissipation Pd: 1.053kW
- Product Range: HybridPACK
- Transistor Case Style: Module
![FS660R08A6P2FBBPSA1 - IGBT Module, Six Pack [Full Bridge], 450 A, 1.1 V, 1.053 kW, 175 °C, Module - INFINEON](http://sinuss.nl/cdn/shop/products/farnell_3407325.jpg?v=1680014942&width=281)