Documenten en downloads
Description
- Channel Type: N Channel
- Continuous Drain Current Id: 5A
- Drain Source On State Resistance: 0.022ohm
- Drain Source Voltage Vds: 30V
- Gate Source Threshold Voltage Max: 800mV
- No. of Pins: 3Pins
- Operating Temperature Max: 150°C
- Power Dissipation: 1.3W
- Product Range: HEXFET Series
- Qualification: -
- Rds(on) Test Voltage: 4.5V
- Transistor Case Style: SOT-23
- Transistor Mounting: Surface Mount
