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Description
VISHAY - SI1012R-T1-GE3 - Power MOSFET, N Channel, 20 V, 600 mA, 0.41 ohm, SOT-416, Surface Mount
- Transistor Polarity: N Channel
- Continuous Drain Current Id: 600mA
- Drain Source Voltage Vds: 20V
- On Resistance Rds(on): 0.41ohm
- Rds(on) Test Voltage Vgs: 4.5V
- Threshold Voltage Vgs: 900mV
- Power Dissipation Pd: 150mW
- Transistor Case Style: SOT-416
- No. of Pins: 3Pins
- Operating Temperature Max: 150°C
- Product Range: -
- Automotive Qualification Standard: -
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (15-Jun-2015)
- Operating Temperature Min: -55°C