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Description
VISHAY - SI9945BDY-T1-GE3 - Dual MOSFET, N Channel, 60 V, 5.3 A, 0.046 ohm, SOIC, Surface Mount
- Transistor Polarity: Dual N Channel
- Continuous Drain Current Id: 5.3A
- Drain Source Voltage Vds: 60V
- On Resistance Rds(on): 0.046ohm
- Rds(on) Test Voltage Vgs: 10V
- Threshold Voltage Vgs: 2.5V
- Power Dissipation Pd: 3.1W
- Transistor Case Style: SOIC
- No. of Pins: 8Pins
- Operating Temperature Max: 150°C
- Product Range: -
- Automotive Qualification Standard: -
- MSL: MSL 1 - Unlimited
- Continuous Drain Current Id, N Channel: 5.3A
- Current Id Max: 5.3A
- Drain Source Voltage Vds, N Channel: 60V
- Module Configuration: Dual
- On Resistance Rds(on), N Channel: 0.058ohm
- Operating Temperature Min: -55°C
- Operating Temperature Range: -55°C to +150°C