SIHH11N65E-T1-GE3 - Power MOSFET, N Channel, 650 V, 12 A, 0.316 ohm, PowerPAK, Surface Mount - VISHAY

VISHAYSKU: SIHH11N65E-T1-GE3 Order code: 3929252

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Description

  • Automotive Qualification Standard: -
  • Channel Type: N Channel
  • Continuous Drain Current Id: 12A
  • Drain Source On State Resistance: 0.316ohm
  • Drain Source Voltage Vds: 650V
  • Gate Source Threshold Voltage Max: 4V
  • No. of Pins: 5Pins
  • On Resistance Rds(on): 0.316ohm
  • Operating Temperature Max: 150°C
  • Power Dissipation: 130W
  • Power Dissipation Pd: 130W
  • Product Range: E Series
  • Qualification: -
  • Rds(on) Test Voltage: 10V
  • Transistor Case Style: PowerPAK
  • Transistor Mounting: Surface Mount
  • Transistor Polarity: N Channel

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