SIHP12N65E-GE3 - Power MOSFET, N Channel, 650 V, 12 A, 0.33 ohm, TO-220AB, Through Hole - VISHAY

VISHAYSKU: SIHP12N65E-GE3 Order code: 3929224

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Sale price€5,32

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In stock (923 units), ready to be shipped

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Description

  • Automotive Qualification Standard: -
  • Channel Type: N Channel
  • Continuous Drain Current Id: 12A
  • Drain Source On State Resistance: 0.33ohm
  • Drain Source Voltage Vds: 650V
  • Gate Source Threshold Voltage Max: 4V
  • No. of Pins: 3Pins
  • On Resistance Rds(on): 0.33ohm
  • Operating Temperature Max: 150°C
  • Power Dissipation: 156W
  • Power Dissipation Pd: 156W
  • Product Range: E Series
  • Qualification: -
  • Rds(on) Test Voltage: 10V
  • Transistor Case Style: TO-220AB
  • Transistor Mounting: Through Hole
  • Transistor Polarity: N Channel

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