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SIHP21N80AE-GE3 - Power MOSFET, N Channel, 800 V, 17.4 A, 0.205 ohm, TO-220AB, Through Hole - VISHAY
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SIHP21N80AE-GE3 - Power MOSFET, N Channel, 800 V, 17.4 A, 0.205 ohm, TO-220AB, Through Hole - VISHAY

SIHP21N80AE-GE3 - Power MOSFET, N Channel, 800 V, 17.4 A, 0.205 ohm, TO-220AB, Through Hole - VISHAY

VISHAYSKU: SIHP21N80AE-GE3 Order code: 3019099
Price:
€5,46

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Description

  • Channel Type: N Channel
  • Continuous Drain Current Id: 17.4A
  • Drain Source On State Resistance: 0.205ohm
  • Drain Source Voltage Vds: 800V
  • Gate Source Threshold Voltage Max: 4V
  • No. of Pins: 3Pins
  • On Resistance Rds(on): 0.205ohm
  • Operating Temperature Max: 150°C
  • Power Dissipation: 32W
  • Power Dissipation Pd: 32W
  • Product Range: E
  • Qualification: -
  • Rds(on) Test Voltage: 10V
  • Transistor Case Style: TO-220AB
  • Transistor Mounting: Through Hole
  • Transistor Polarity: N Channel

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