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DIODES INC. - DMMT5551-7-F - Bipolar Transistor Array, NPN, 160 V, 200 mA, 300 mW, 80 hFE, SOT-26
- Transistor Polarity: NPN
- Collector Emitter Voltage V(br)ceo: 160V
- Power Dissipation Pd: 300mW
- DC Collector Current: 200mA
- DC Current Gain hFE: 80hFE
- Transistor Case Style: SOT-26
- No. of Pins: 6Pins
- Operating Temperature Max: 150°C
- Product Range: -
- Automotive Qualification Standard: -
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (15-Jan-2019)
- Collector Emitter Saturation Voltage Vce(on): 200mV
- Current Ic Continuous a Max: 200mA
- Gain Bandwidth ft Typ: 300MHz
- Hfe Min: 80
- Module Configuration: Dual
- Operating Temperature Min: -55°C
- Operating Temperature Range: -55°C to +150°C
- Transistor Type: Small Signal
- Transition Frequency ft: 300MHz
