GAN041-650WSBQ - Gallium Nitride (GaN) Transistor, 650 V, 47.2 A, 0.041 ohm, 22 nC, TO-247, Through Hole - NEXPERIA

NEXPERIAUGS :GAN041-650WSBQ Code de commande:3759053

Prix:
Prix promotionnel€37,68

incl. T.V.A. Calcul des frais d'expédition à la caisse

Stock:
En stock (29 unité)

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Description

  • Continuous Drain Current Id: 47.2A
  • Drain Source On State Resistance: 0.041ohm
  • Drain Source Voltage Vds: 650V
  • No. of Pins: 3Pins
  • On Resistance Rds(on) Max: 0.041ohm
  • Product Range: -
  • Qualification: -
  • Transistor Case Style: TO-247
  • Transistor Mounting: Through Hole
  • Typical Gate Charge: 22nC

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