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VISHAY - SI2365EDS-T1-GE3 - Power MOSFET, P Channel, 20 V, 5.9 A, 0.0265 ohm, SOT-23, Surface Mount
- Transistor Polarity: P Channel
- Continuous Drain Current Id: -5.9A
- Drain Source Voltage Vds: -20V
- On Resistance Rds(on): 0.0265ohm
- Rds(on) Test Voltage Vgs: -4.5V
- Threshold Voltage Vgs: -1V
- Power Dissipation Pd: 1.7W
- Transistor Case Style: SOT-23
- No. of Pins: 3Pins
- Operating Temperature Max: 150°C
- Product Range: TrenchFET Series
- Automotive Qualification Standard: -
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (20-Jun-2016)