SIDR5802EP-T1-RE3 - Power MOSFET, N Channel, 80 V, 153 A, 0.0024 ohm, PowerPAK SO, Surface Mount - VISHAY

VISHAYUGS :SIDR5802EP-T1-RE3 Code de commande:4006711

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description

  • Automotive Qualification Standard: -
  • Channel Type: N Channel
  • Continuous Drain Current Id: 153A
  • Drain Source On State Resistance: 0.0024ohm
  • Drain Source Voltage Vds: 80V
  • Gate Source Threshold Voltage Max: 4V
  • MSL: MSL 1 - Unlimited
  • No. of Pins: 8Pins
  • On Resistance Rds(on): 0.0024ohm
  • Operating Temperature Max: 175°C
  • Power Dissipation: 150W
  • Power Dissipation Pd: 150W
  • Product Range: TrenchFET Gen V Series
  • Qualification: -
  • Rds(on) Test Voltage: 10V
  • Transistor Case Style: PowerPAK SO
  • Transistor Mounting: Surface Mount
  • Transistor Polarity: N Channel

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