SIHH125N60EF-T1GE3 - Power MOSFET, N Channel, 600 V, 23 A, 0.109 ohm, PowerPAK, Surface Mount - VISHAY

VISHAYUGS :SIHH125N60EF-T1GE3 Code de commande:3253833

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Description

  • Automotive Qualification Standard: -
  • Channel Type: N Channel
  • Continuous Drain Current Id: 23A
  • Drain Source On State Resistance: 0.109ohm
  • Drain Source Voltage Vds: 600V
  • Gate Source Threshold Voltage Max: 5V
  • MSL: MSL 1 - Unlimited
  • No. of Pins: 8Pins
  • On Resistance Rds(on): 0.109ohm
  • Operating Temperature Max: 150°C
  • Power Dissipation: 156W
  • Power Dissipation Pd: 156W
  • Product Range: EF
  • Qualification: -
  • Rds(on) Test Voltage: 10V
  • Transistor Case Style: PowerPAK
  • Transistor Mounting: Surface Mount
  • Transistor Polarity: N Channel

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