SIHP28N65EF-GE3 - Power MOSFET, N Channel, 650 V, 28 A, 0.102 ohm, TO-220AB, Through Hole - VISHAY

VISHAYUGS :SIHP28N65EF-GE3 Code de commande:3929229

Prix:
Prix promotionnel€10,49

incl. T.V.A. Calcul des frais d'expédition à la caisse

Stock:
En stock (999 unité)

Documenten en downloads

Description

  • Automotive Qualification Standard: -
  • Channel Type: N Channel
  • Continuous Drain Current Id: 28A
  • Drain Source On State Resistance: 0.102ohm
  • Drain Source Voltage Vds: 650V
  • Gate Source Threshold Voltage Max: 4V
  • No. of Pins: 3Pins
  • On Resistance Rds(on): 0.102ohm
  • Operating Temperature Max: 150°C
  • Power Dissipation: 250W
  • Power Dissipation Pd: 250W
  • Product Range: E Series
  • Qualification: -
  • Rds(on) Test Voltage: 10V
  • Transistor Case Style: TO-220AB
  • Transistor Mounting: Through Hole
  • Transistor Polarity: N Channel

Frais de port prévus

Tu pourrais aussi aimer