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SISS32LDN-T1-GE3 - Power MOSFET, N Channel, 80 V, 63 A, 0.0058 ohm, PowerPAK 1212-8S, Surface Mount - VISHAY
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SISS32LDN-T1-GE3 - Power MOSFET, N Channel, 80 V, 63 A, 0.0058 ohm, PowerPAK 1212-8S, Surface Mount - VISHAY

SISS32LDN-T1-GE3 - Power MOSFET, N Channel, 80 V, 63 A, 0.0058 ohm, PowerPAK 1212-8S, Surface Mount - VISHAY

VISHAYUGS :SISS32LDN-T1-GE3 Code de commande:3280630
Prix:
€2,90

incl. T.V.A. Calcul des frais d'expédition à la caisse

Stock:
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Description

  • Channel Type: N Channel
  • Continuous Drain Current Id: 63A
  • Drain Source On State Resistance: 0.0058ohm
  • Drain Source Voltage Vds: 80V
  • Gate Source Threshold Voltage Max: 2.5V
  • MSL: MSL 1 - Unlimited
  • No. of Pins: 8Pins
  • On Resistance Rds(on): 0.0058ohm
  • Operating Temperature Max: 150°C
  • Power Dissipation: 65.7W
  • Power Dissipation Pd: 65.7W
  • Product Range: TrenchFET Gen IV
  • Qualification: -
  • Rds(on) Test Voltage: 10V
  • Transistor Case Style: PowerPAK 1212-8S
  • Transistor Mounting: Surface Mount
  • Transistor Polarity: N Channel

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