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Description
VISHAY - SI2308BDS-T1-GE3 - Power MOSFET, N Channel, 60 V, 2.3 A, 0.13 ohm, TO-236, Surface Mount
- Transistor Polarity: N Channel
- Continuous Drain Current Id: 2.3A
- Drain Source Voltage Vds: 60V
- On Resistance Rds(on): 0.13ohm
- Rds(on) Test Voltage Vgs: 10V
- Threshold Voltage Vgs: 3V
- Power Dissipation Pd: 1.09W
- Transistor Case Style: TO-236
- No. of Pins: 3Pins
- Operating Temperature Max: 150°C
- Product Range: -
- Automotive Qualification Standard: -
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (15-Jun-2015)
- Current Id Max: 1.9A
- Operating Temperature Min: -55°C
- Operating Temperature Range: -55°C to +150°C
- Voltage Vgs Max: 20V