SI4155DY-T1-GE3 - Power MOSFET, P Channel, 30 V, 13.6 A, 0.0125 ohm, SOIC, Surface Mount - VISHAY

VISHAYSKU: SI4155DY-T1-GE3 Order code: 4014702

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Sale price€1,78

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In stock (3693 units), ready to be shipped

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Description

  • Automotive Qualification Standard: -
  • Channel Type: P Channel
  • Continuous Drain Current Id: 13.6A
  • Drain Source On State Resistance: 0.0125ohm
  • Drain Source Voltage Vds: 30V
  • Gate Source Threshold Voltage Max: 2.5V
  • MSL: MSL 1 - Unlimited
  • No. of Pins: 8Pins
  • On Resistance Rds(on): 0.0125ohm
  • Operating Temperature Max: 150°C
  • Power Dissipation: 4.5W
  • Power Dissipation Pd: 4.5W
  • Product Range: TrenchFET Series
  • Qualification: -
  • Rds(on) Test Voltage: 10V
  • Transistor Case Style: SOIC
  • Transistor Mounting: Surface Mount
  • Transistor Polarity: P Channel

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