SIHD186N60EF-GE3 - Power MOSFET, N Channel, 600 V, 19 A, 0.175 ohm, TO-252 (DPAK), Surface Mount - VISHAY

VISHAYSKU: SIHD186N60EF-GE3 Order code: 3128841

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Sale price€5,62

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In stock (875 units), ready to be shipped

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Description

  • Automotive Qualification Standard: -
  • Channel Type: N Channel
  • Continuous Drain Current Id: 19A
  • Drain Source On State Resistance: 0.175ohm
  • Drain Source Voltage Vds: 600V
  • Gate Source Threshold Voltage Max: 5V
  • MSL: MSL 1 - Unlimited
  • No. of Pins: 3Pins
  • On Resistance Rds(on): 0.175ohm
  • Operating Temperature Max: 150°C
  • Power Dissipation: 156W
  • Power Dissipation Pd: 156W
  • Product Range: EF
  • Qualification: -
  • Rds(on) Test Voltage: 10V
  • Transistor Case Style: TO-252 (DPAK)
  • Transistor Mounting: Surface Mount
  • Transistor Polarity: N Channel

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