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Description
- Collector Emitter Saturation Voltage: 2.2V
- Collector Emitter Saturation Voltage Vce(on): 600V
- Collector Emitter Voltage Max: 600V
- Collector Emitter Voltage V(br)ceo: 600V
- Continuous Collector Current: 200A
- DC Collector Current: 200A
- IGBT Configuration: Dual [Half Bridge]
- IGBT Technology: IGBT 5 [Trench Gate]
- IGBT Termination: Stud
- Junction Temperature Tj Max: 150°C
- Operating Temperature Max: 150°C
- Power Dissipation: 650W
- Power Dissipation Pd: 650W
- Product Range: NF Series
- Transistor Case Style: Module
- Transistor Mounting: Panel