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ONSEMI - 2N5191G - Bipolar (BJT) Single Transistor, NPN, 60 V, 4 A, 40 W, TO-225AA, Through Hole
- Transistor Polarity: NPN
- Collector Emitter Voltage V(br)ceo: 60V
- Transition Frequency ft: 2MHz
- Power Dissipation Pd: 40W
- DC Collector Current: 4A
- DC Current Gain hFE: 2hFE
- Transistor Case Style: TO-225AA
- No. of Pins: 3Pins
- Operating Temperature Max: 150°C
- Product Range: -
- Automotive Qualification Standard: -
- MSL: -
- SVHC: No SVHC (27-Jun-2018)
- Collector Emitter Saturation Voltage Vce(on): 600mV
- Complementary Device: 2N5194 / 2N5195
- Continuous Collector Current Ic Max: 4A
- Current Ic Continuous a Max: 4A
- Current Ic hFE: 4A
- Gain Bandwidth ft Min: 2MHz
- Gain Bandwidth ft Typ: 2MHz
- Hfe Min: 10
- Operating Temperature Min: -65°C
- Operating Temperature Range: -65°C to +150°C
- Power Dissipation Ptot Max: 40W
- Termination Type: Through Hole
- Voltage Vcbo: 60V
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