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ONSEMI - 2N5551 - Bipolar (BJT) Single Transistor, NPN, 160 V, 600 mA, 625 mW, TO-92, Through Hole
- Transistor Polarity: NPN
- Collector Emitter Voltage V(br)ceo: 160V
- Transition Frequency ft: 150MHz
- Power Dissipation Pd: 625mW
- DC Collector Current: 600mA
- DC Current Gain hFE: 80hFE
- Transistor Case Style: TO-92
- No. of Pins: 3Pins
- Operating Temperature Max: 150°C
- Product Range: -
- Automotive Qualification Standard: -
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (15-Jan-2018)
- Collector Emitter Saturation Voltage Vce(on): 150mV
- Continuous Collector Current Ic Max: 600mA
- Current Ic Continuous a Max: 600mA
- Current Ic hFE: 10mA
- Device Marking: 2N5551
- Gain Bandwidth ft Min: 100MHz
- Gain Bandwidth ft Typ: 300MHz
- Hfe Min: 80
- No. of Transistors: 1
- Operating Temperature Min: -55°C
- Operating Temperature Range: -55°C to +150°C
- Pin Configuration: b
- Power Dissipation Ptot Max: 350mW
- Voltage Vcbo: 180V