Omschrijving
NXP - AFV10700HR5 - RF FET Transistor, LDMOS, 105 VDC, 526 W, 1.03 GHz, 1.09 GHz, NI-780H
- Drain Source Voltage Vds: 105VDC
- Continuous Drain Current Id: -
- Power Dissipation Pd: 526W
- Operating Frequency Min: 1.03GHz
- Operating Frequency Max: 1.09GHz
- RF Transistor Case: NI-780H
- No. of Pins: 4Pins
- Operating Temperature Max: 150°C
- Product Range: -
- MSL: MSL 3 - 168 hours
- SVHC: No SVHC (15-Jan-2019)