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ONSEMI - FDC6561AN - Dual MOSFET, N Channel, 30 V, 2.5 A, 0.082 ohm, SuperSOT, Surface Mount
- Transistor Polarity: Dual N Channel
- Continuous Drain Current Id: 2.5A
- Drain Source Voltage Vds: 30V
- On Resistance Rds(on): 0.082ohm
- Rds(on) Test Voltage Vgs: 10V
- Threshold Voltage Vgs: 1.8V
- Power Dissipation Pd: 960mW
- Transistor Case Style: SuperSOT
- No. of Pins: 6Pins
- Operating Temperature Max: 150°C
- Product Range: -
- Automotive Qualification Standard: -
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (27-Jun-2018)
- Operating Temperature Min: -55°C