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ONSEMI - FJP13009H2TU - Bipolar (BJT) Single Transistor, NPN, 400 V, 12 A, 100 W, TO-220, Through Hole
- Transistor Polarity: NPN
- Collector Emitter Voltage V(br)ceo: 400V
- Transition Frequency ft: 4MHz
- Power Dissipation Pd: 100W
- DC Collector Current: 12A
- DC Current Gain hFE: 8hFE
- Transistor Case Style: TO-220
- No. of Pins: 3Pins
- Operating Temperature Max: 150°C
- Product Range: -
- Automotive Qualification Standard: -
- MSL: -
- SVHC: Lead (27-Jun-2018)
- Collector Emitter Saturation Voltage Vce(on): 3V
- Current Ic Continuous a Max: 12A
- Gain Bandwidth ft Typ: 4MHz
- Hfe Min: 6
- Termination Type: Through Hole
- Transistor Type: Switching