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ONSEMI - FQB55N10TM - Power MOSFET, N Channel, 100 V, 55 A, 0.021 ohm, TO-263AB, Surface Mount
- Transistor Polarity: N Channel
- Continuous Drain Current Id: 55A
- Drain Source Voltage Vds: 100V
- On Resistance Rds(on): 0.021ohm
- Rds(on) Test Voltage Vgs: 10V
- Threshold Voltage Vgs: 4V
- Power Dissipation Pd: 155W
- Transistor Case Style: TO-263AB
- No. of Pins: 3Pins
- Operating Temperature Max: 175°C
- Product Range: -
- Automotive Qualification Standard: -
- MSL: MSL 1 - Unlimited
- SVHC: Lead (27-Jun-2018)
- Operating Temperature Min: -55°C