Omschrijving
STARPOWER - GD100HFY120C1S - IGBT Module, Half Bridge, 155 A, 2 V, 511 W, 150 °C, Module
- Transistor Polarity: Dual N Channel
- DC Collector Current: 155A
- Collector Emitter Saturation Voltage Vce(on): 2V
- Power Dissipation Pd: 511W
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Transistor Case Style: Module
- No. of Pins: 7Pins
- Operating Temperature Max: 150°C
- Product Range: -
- SVHC: No SVHC (27-Jun-2018)