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IXYS SEMICONDUCTOR - IXFP14N60P - MOSFET, N, TO-220
- Transistor Polarity: N Channel
- Continuous Drain Current Id: 14A
- Drain Source Voltage Vds: 600V
- On Resistance Rds(on): 550mohm
- Threshold Voltage Vgs Typ: 5.5V
- Power Dissipation Pd: 300W
- Transistor Case Style: TO-220
- No. of Pins: 3
- Capacitance Ciss Typ: 2300pF
- Junction to Case Thermal Resistance A: 0.42°C/W
- N-channel Gate Charge: 38nC
- Package / Case: TO-220 (SOT-78B)
- Power Dissipation Pd: 300W
- Reverse Recovery Time trr Max: 200ns
- Termination Type: Through Hole
- Transistor Type: High Performance FET
- Voltage Vds Typ: 600V
- Voltage Vgs Rds on Measurement: 10V