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ONSEMI - MJ802G - Bipolar (BJT) Single Transistor, NPN, 90 V, 30 A, 200 W, TO-204, Through Hole
- Transistor Polarity: NPN
- Collector Emitter Voltage V(br)ceo: 90V
- Transition Frequency ft: 2MHz
- Power Dissipation Pd: 200W
- DC Collector Current: 30A
- DC Current Gain hFE: 25hFE
- Transistor Case Style: TO-204
- No. of Pins: 2Pins
- Operating Temperature Max: 200°C
- Product Range: -
- Automotive Qualification Standard: AEC-Q101
- MSL: -
- SVHC: Lead (27-Jun-2018)
