MJE5852G Transistor, PNP, TO-220AB ONSEMI

ONSEMISKU:MJE5852G Bestelcode:9555889

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ONSEMI - MJE5852G - Bipolar (BJT) Single Transistor, PNP, 400 V, 8 A, 80 W, TO-220AB, Through Hole

  • Transistor Polarity: PNP
  • Collector Emitter Voltage V(br)ceo: 400V
  • Transition Frequency ft: -
  • Power Dissipation Pd: 80W
  • DC Collector Current: 8A
  • DC Current Gain hFE: 15hFE
  • Transistor Case Style: TO-220AB
  • No. of Pins: 3Pins
  • Operating Temperature Max: 150°C
  • Product Range: MJxxxx Series
  • Automotive Qualification Standard: -
  • MSL: -
  • SVHC: Lead (27-Jun-2018)
  • Application Code: PHVS
  • Av Current Ic: 8A
  • Collector Emitter Saturation Voltage Vce(on): 2V
  • Continuous Collector Current Ic Max: 8A
  • Current Ib: 4A
  • Current Ic @ Vce Sat: 4A
  • Current Ic Continuous a Max: 8A
  • Current Ic hFE: 5mA
  • Device Marking: MJE5852
  • External Depth: 4.82mm
  • External Length / Height: 30.02mm
  • External Width: 10.28mm
  • Fall Time @ Ic: 0.5µs
  • Full Power Rating Temperature: 25°C
  • Hfe Min: 5
  • Junction Temperature Tj Max: 150°C
  • Junction Temperature Tj Min: -65°C
  • Junction to Case Thermal Resistance A: 1.25°C/W
  • No. of Transistors: 1
  • Operating Temperature Min: -65°C
  • Power Dissipation Ptot Max: 80W
  • Voltage Vces: 450V

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