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NEXPERIA - PEMT1,115 - Bipolar Transistor Array, General Purpose, PNP, 40 V, -100 mA, 200 mW, 120 hFE, SOT-666
- Transistor Polarity: PNP
- Collector Emitter Voltage V(br)ceo: 40V
- Power Dissipation Pd: 200mW
- DC Collector Current: -100mA
- DC Current Gain hFE: 120hFE
- Transistor Case Style: SOT-666
- No. of Pins: 6Pins
- Operating Temperature Max: 150°C
- Product Range: -
- Automotive Qualification Standard: -
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (27-Jun-2018)
- Collector Emitter Saturation Voltage Vce(on): -200mV
- Continuous Collector Current Ic Max: 100mA
- Current Ic Continuous a Max: 100mA
- Current Ic hFE: 1mA
- Full Power Rating Temperature: 25°C
- Gain Bandwidth ft Typ: 100MHz
- Hfe Min: 120
- Module Configuration: Dual
- Operating Temperature Min: -65°C
- Operating Temperature Range: -65°C to +150°C
- Power Dissipation Ptot Max: 300mW
- Power Dissipation per device Max: 200mW
- SMD Marking: FF
- Transition Frequency ft: 100MHz
- Voltage Vcbo: 50V