Documenten en downloads
Omschrijving
VISHAY - SIA456DJ-T1-GE3 - Power MOSFET, TrenchFET, N Channel, 200 V, 2.6 A, 1.08 ohm, SC-70, Surface Mount
- Transistor Polarity: N Channel
- Continuous Drain Current Id: 2.6A
- Drain Source Voltage Vds: 200V
- On Resistance Rds(on): 1.08ohm
- Rds(on) Test Voltage Vgs: 4.5V
- Threshold Voltage Vgs: 1.4V
- Power Dissipation Pd: 19W
- Transistor Case Style: SC-70
- No. of Pins: 6Pins
- Operating Temperature Max: 150°C
- Product Range: -
- Automotive Qualification Standard: -
- MSL: -